SQJ110EP-T1_GE3

  • image of 单 FET、MOSFET>SQJ110EP-T1_GE3
  • image of 单 FET、MOSFET>SQJ110EP-T1_GE3
  • image of 单 FET、MOSFET>SQJ110EP-T1_GE3
  • image of 单 FET、MOSFET>SQJ110EP-T1_GE3
SQJ110EP-T1_GE3
单 FET、MOSFET
Vishay / Siliconix
AUTOMOTIVE N-CH
卷带式 (TR)
0
: $0.7575
: 0

1

$1.6766

$1.6766

10

$1.3938

$13.9380

100

$1.1110

$111.1000

500

$0.9393

$469.6500

1000

$0.7979

$797.9000

3000

$0.7575

$2,272.5000

6000

$0.7272

$4,363.2000

9000

$0.7070

$6,363.0000

image of 单 FET、MOSFET>SQJ110EP-T1_GE3
image of 单 FET、MOSFET>SQJ110EP-T1_GE3
image of 单 FET、MOSFET>SQJ110EP-T1_GE3
SQJ110EP-T1_GE3
SQJ110EP-T1_GE3
单 FET、MOSFET
Vishay / Siliconix
AUTOMOTIVE N-CH
卷带式 (TR)
0
产品参数
PDF(1)
类型描述
制造商Vishay / Siliconix
系列TrenchFET®
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱PowerPAK® SO-8
安装类型Surface Mount
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C170A (Tc)
Rds On(最大)@Id、Vgs6.3mOhm @ 15A, 10V
功耗(最大)500W (Tc)
Vgs(th)(最大值)@Id3.5V @ 250µA
供应商设备包PowerPAK® SO-8
年级Automotive
驱动电压(最大导通电阻、最小导通电阻)10V
Vgs(最大)±20V
漏源电压 (Vdss)100 V
栅极电荷 (Qg)(最大值)@Vgs113 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds6100 pF @ 25 V
资质AEC-Q101
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