SQA440CEJW-T1_GE3

  • image of 单 FET、MOSFET>SQA440CEJW-T1_GE3
  • image of 单 FET、MOSFET>SQA440CEJW-T1_GE3
SQA440CEJW-T1_GE3
单 FET、MOSFET
Vishay / Siliconix
AUTOMOTIVE N-CH
卷带式 (TR)
9460
: $0.5555
: 9460

1

$0.5555

$0.5555

10

$0.4747

$4.7470

100

$0.3333

$33.3300

500

$0.2626

$131.3000

1000

$0.2121

$212.1000

3000

$0.1919

$575.7000

6000

$0.1818

$1,090.8000

9000

$0.1616

$1,454.4000

30000

$0.1616

$4,848.0000

image of 单 FET、MOSFET>SQA440CEJW-T1_GE3
image of 单 FET、MOSFET>SQA440CEJW-T1_GE3
SQA440CEJW-T1_GE3
SQA440CEJW-T1_GE3
单 FET、MOSFET
Vishay / Siliconix
AUTOMOTIVE N-CH
卷带式 (TR)
9460
产品参数
PDF(1)
类型描述
制造商Vishay / Siliconix
系列TrenchFET®
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-PowerVDFN
安装类型Surface Mount, Wettable Flank
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C9A (Tc)
Rds On(最大)@Id、Vgs14.4mOhm @ 5A, 10V
功耗(最大)13.6W (Tc)
Vgs(th)(最大值)@Id2.2V @ 250µA
供应商设备包PowerPAK®SC-70W-6
年级Automotive
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)40 V
栅极电荷 (Qg)(最大值)@Vgs17.5 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds880 pF @ 25 V
资质AEC-Q101
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