NTMFS2D3N04XMT1G

  • image of 单 FET、MOSFET>NTMFS2D3N04XMT1G
  • image of 单 FET、MOSFET>NTMFS2D3N04XMT1G
NTMFS2D3N04XMT1G
单 FET、MOSFET
Sanyo Semiconductor/onsemi
40V T10M IN S08
卷带式 (TR)
0
: $0.3939
: 0

1

$0.9191

$0.9191

10

$0.7979

$7.9790

100

$0.5555

$55.5500

500

$0.4646

$232.3000

1500

$0.3939

$590.8500

3000

$0.3535

$1,060.5000

7500

$0.3333

$2,499.7500

10500

$0.3030

$3,181.5000

image of 单 FET、MOSFET>NTMFS2D3N04XMT1G
image of 单 FET、MOSFET>NTMFS2D3N04XMT1G
NTMFS2D3N04XMT1G
NTMFS2D3N04XMT1G
单 FET、MOSFET
Sanyo Semiconductor/onsemi
40V T10M IN S08
卷带式 (TR)
0
产品参数
PDF(1)
类型描述
制造商Sanyo Semiconductor/onsemi
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerTDFN, 5 Leads
安装类型Surface Mount
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C111A (Tc)
Rds On(最大)@Id、Vgs2.35mOhm @ 20A, 10V
功耗(最大)53W (Tc)
Vgs(th)(最大值)@Id3.5V @ 60µA
供应商设备包5-DFN (5x6) (8-SOFL)
驱动电压(最大导通电阻、最小导通电阻)10V
Vgs(最大)±20V
漏源电压 (Vdss)40 V
栅极电荷 (Qg)(最大值)@Vgs22.1 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds1421 pF @ 20 V
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