BY25Q80BSSIG(R)

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  • image of 记忆>BY25Q80BSSIG(R)
BY25Q80BSSIG(R)
记忆
BYTe Semiconductor
8 MBIT, 3.0V (2
卷带式 (TR)
4000
: $0.1717
: 4000

1

$0.4747

$0.4747

10

$0.4040

$4.0400

25

$0.3838

$9.5950

100

$0.3030

$30.3000

250

$0.2828

$70.7000

500

$0.2424

$121.2000

1000

$0.1818

$181.8000

2000

$0.1717

$343.4000

6000

$0.1616

$969.6000

10000

$0.1515

$1,515.0000

50000

$0.1313

$6,565.0000

image of 记忆>BY25Q80BSSIG(R)
image of 记忆>BY25Q80BSSIG(R)
BY25Q80BSSIG(R)
BY25Q80BSSIG(R)
记忆
BYTe Semiconductor
8 MBIT, 3.0V (2
卷带式 (TR)
4000
产品参数
PDF(1)
类型描述
制造商BYTe Semiconductor
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-SOIC (0.209", 5.30mm Width)
安装类型Surface Mount
内存大小8Mbit
内存类型Non-Volatile
工作温度-40°C ~ 85°C (TA)
电压 - 电源2.7V ~ 3.6V
技术FLASH - NOR (SLC)
时钟频率108 MHz
内存格式FLASH
供应商设备包8-SOP
写入周期时间 - 字、页50µs, 2.4ms
内存接口SPI - Quad I/O, QPI
存取时间7 ns
记忆组织1M x 8
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