ALD212900APAL

  • image of FET、MOSFET 阵列>ALD212900APAL
  • image of FET、MOSFET 阵列>ALD212900APAL
ALD212900APAL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N-CH 10
管子
0
: $7.9891
: 0

1

$7.9891

$7.9891

50

$6.3731

$318.6550

100

$5.7065

$570.6500

500

$5.0298

$2,514.9000

1000

$4.5349

$4,534.9000

2000

$4.2420

$8,484.0000

image of FET、MOSFET 阵列>ALD212900APAL
image of FET、MOSFET 阵列>ALD212900APAL
ALD212900APAL
ALD212900APAL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N-CH 10
管子
0
产品参数
PDF(1)
类型描述
制造商Advanced Linear Devices, Inc.
系列EPAD®, Zero Threshold™
包裹管子
产品状态ACTIVE
包装/箱8-DIP (0.300", 7.62mm)
安装类型Through Hole
配置2 N-Channel (Dual) Matched Pair
工作温度0°C ~ 70°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大500mW
漏源电压 (Vdss)10.6V
电流 - 连续漏极 (Id) @ 25°C80mA
输入电容 (Ciss)(最大值)@Vds30pF @ 5V
Rds On(最大)@Id、Vgs14Ohm
场效应管特性Logic Level Gate
Vgs(th)(最大值)@Id10mV @ 20µA
供应商设备包8-PDIP
captcha

点击这里给我发消息
0