ALD110900APAL

  • image of FET、MOSFET 阵列>ALD110900APAL
  • image of FET、MOSFET 阵列>ALD110900APAL
ALD110900APAL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N-CH 10
管子
0
: $6.5549
: 0

1

$8.2012

$8.2012

50

$6.5549

$327.7450

100

$5.8580

$585.8000

500

$5.1712

$2,585.6000

1000

$4.6561

$4,656.1000

2000

$4.3632

$8,726.4000

image of FET、MOSFET 阵列>ALD110900APAL
image of FET、MOSFET 阵列>ALD110900APAL
ALD110900APAL
ALD110900APAL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N-CH 10
管子
0
产品参数
PDF(1)
类型描述
制造商Advanced Linear Devices, Inc.
系列EPAD®, Zero Threshold™
包裹管子
产品状态ACTIVE
包装/箱8-DIP (0.300", 7.62mm)
安装类型Through Hole
配置2 N-Channel (Dual) Matched Pair
工作温度0°C ~ 70°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大500mW
漏源电压 (Vdss)10.6V
输入电容 (Ciss)(最大值)@Vds2.5pF @ 5V
Rds On(最大)@Id、Vgs500Ohm @ 4V
Vgs(th)(最大值)@Id10mV @ 1µA
供应商设备包8-PDIP
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