ALD1103PBL

  • image of FET、MOSFET 阵列>ALD1103PBL
  • image of FET、MOSFET 阵列>ALD1103PBL
ALD1103PBL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N/2P-CH
管子
558
: $9.2213
: 558

1

$9.2213

$9.2213

50

$7.3629

$368.1450

100

$6.5852

$658.5200

500

$5.8176

$2,908.8000

1000

$5.2318

$5,231.8000

2000

$4.9086

$9,817.2000

image of FET、MOSFET 阵列>ALD1103PBL
image of FET、MOSFET 阵列>ALD1103PBL
ALD1103PBL
ALD1103PBL
FET、MOSFET 阵列
Advanced Linear Devices, Inc.
MOSFET 2N/2P-CH
管子
558
产品参数
PDF(1)
类型描述
制造商Advanced Linear Devices, Inc.
系列-
包裹管子
产品状态ACTIVE
包装/箱14-DIP (0.300", 7.62mm)
安装类型Through Hole
配置2 N and 2 P-Channel Matched Pair
工作温度0°C ~ 70°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大500mW
漏源电压 (Vdss)10.6V
电流 - 连续漏极 (Id) @ 25°C40mA, 16mA
输入电容 (Ciss)(最大值)@Vds10pF @ 5V
Rds On(最大)@Id、Vgs75Ohm @ 5V
Vgs(th)(最大值)@Id1V @ 10µA
供应商设备包14-PDIP
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