MT53E128M32D2DS-053 WT:A

  • image of Memory>MT53E128M32D2DS-053 WT:A
  • image of Memory>MT53E128M32D2DS-053 WT:A
MT53E128M32D2DS-053 WT:A
Memory
Micron Technology Inc.
IC DRAM 4GBIT 1
-
Tray
-
: 20.76

1

20.76

20.76

10

19.098

190.98

25

18.6988

467.47

40

18.6365

745.46

80

16.71963

1337.5704

230

16.217

3729.91

440

15.41918

6784.4392

image of Memory>MT53E128M32D2DS-053 WT:A
image of Memory>MT53E128M32D2DS-053 WT:A
MT53E128M32D2DS-053 WT:A
MT53E128M32D2DS-053 WT:A
Memory
Micron Technology Inc.
IC DRAM 4GBIT 1
-
Tray
TYPEDESCRIPTION
MfrMicron Technology Inc.
Series-
PackageTray
Part StatusActive
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4
Memory Size4Gb (128M x 32)
Memory Interface-
Clock Frequency1.866 GHz
Write Cycle Time - Word, Page-
Voltage - Supply1.1V
Operating Temperature-30°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case200-WFBGA
Supplier Device Package200-WFBGA (10x14.5)
Base Product NumberMT53E128
captcha

(+86) 755-8257-9923

点击这里给我发消息
0